Nd:GdVO4
Neodymium doped Gadolinium Vanadate (Nd:GdVO4) is a promising material for diode pumped laser. Similar to Nd:YVO4 crystal, Nd:GdVO4 crystal also exhibits high gain, low threshold, and high absorption coefficients at pumping wavelengths, which result from the excellent fit of the neodymium dopant in the crystal lattice. Nd:GdVO4 has the additional advantage over Nd:YVO4 of a much higher thermal conductivity. With advanced technology on growing and manufacturing high optical quality Nd:GdVO4 crystals, FOCtek can provide a wide variety of finished crystals, our general Nd:GdVO4 production capabilities include.
Capabilities Include:
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| Typical Sepecification and Tolerance: |
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1)
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Orientation:
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a-cut crystalline direction(+/-0.20)
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2)
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Dimensional tolerance:
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+/-0.1mm(typical)High precision +/-0.005mm can be available upon request.
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3)
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Wavefront Distortion:
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<l/8@633nm
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4)
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Surface quality:
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better than 20/10 Scratch/Dig per MIL-O-1380A
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5)
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Parallelism:
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< 10 arc seconds
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6)
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Perpendicularity:
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< 5 arc minutes
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7)
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Surface flatness:
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<l/10 at 632.8nm
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8)
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Clear aperture:
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Central 95%
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9)
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Chamfer:
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0.15x450
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10)
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Damage threshold:
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over 15J/cm2 (rods without coating) over 700 MW/cm2 (coated)
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11)
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Coating:
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1)AR@1063nm, R< 0.1% & HT@808nm, T>95%(see coating 3-1 ) 2)HR@1063nm, R>99.8% & HT@808nm, T>95%(see coating 3-2 ) 3)AR@1063 nm, R<0.1%(see coating 3-3 ) |
| Notes: |
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To inquiry or order a finished Nd:GdVO4 laser crystals, please specify the specification listed above, for common online_ordering, we only need to know the main specification: Nd-dopant concentration, sizes, surface quality and coating. For special request, please specify specification in details for evaluation and fabrication.
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Crystal Structure
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Zircon Tetragonal, space group D4h, a=b=7.21, c=6.35
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Melting Point
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1780°C
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Density
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5.47g/ cm3
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Mohs Hardness
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Glass-like, ~ 5
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Thermal Expansion Coefficient
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aa=1.5x10-6/K, ac=7.3x10-6/K
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Thermal Conductivity Coefficient
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11.7 W/m/K <110>
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Peak Absorption Wavelength
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808.5 nm
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Lasing Wavelength
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912.6 nm, 1063.1 nm, 1341.3 nm
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Crystal Class
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Positive uniaxial, no=na=nb ne=nc
no=1.9854, ne=2.1981,@ 1064nm
no=2.0382, ne=2.2929, @ 532nm
no=1.9977, ne=2.2198, @ 808nm
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Thermal Optical Coefficient
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dn/dT=4.7x10-6/K
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Stimulated Emission Cross-Section
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7.60x10-19cm2 @1064 nm
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Fluorescent LifetimeNd=1.2 atm%
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95 μs@ 808 nm
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Loss Coefficient
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0.003 cm-1@ 1064 nm
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Absorption CoefficienceNd=1.2 atm%
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74 cm-1 @ 808 nm
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Absorption LengthNd=1.2 atm%
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0.18 mm @ 808 nm
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Intrinsic LossNd=1.2 atm%
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Less 0.1% cm-1 @1064 nm
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Line width
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0.6 nm
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Polarized Laser Emission
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p parallel to optic axis (c-axis)
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Diode Pumped Optical to Optical Efficiency
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> 60%
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Sellmeier Equation (for pure GdVO4 crystals)
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ne2=4.734369 + 0.1216149/(l2 - 0.0523664) - 0.013927l2no2=3.8987165+0.05990622/(l2 - 0.0514395) - 0.011319l2
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| - |
Nd:GdVO4, 1.2 atm% Nd
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Nd:YVO4 1.1 atm% Nd |
| Melting temperature (T°C) |
1780
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1825 |
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Fluorescence lifetime ( t )
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95 μs |
100 μs
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| Stimulated emission cross section ( s ) | 7.6x10 -19 cm -2 | 15.6x10 -19 cm -2 ( p -pol) |
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Absorption coefficient
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78cm -1 | 31.2 cm -1 |
| La | 0.18mm | 0.32mm |
| Threshold power | 70mw | 78mw |
| Conversion efficiency h s | 50% | 48.6% |
| Thermal conductivity coefficient | 11.7w/m/k | 5.10w/m/k |
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